| Summary: | 碩士 === 長庚大學 === 電子工程學研究所 === 97 === A modified Angelov model for Small Sizes and Scaling Gate Width in High Performance AlGaAs/InGaAs Enhancement-Mode pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias dependent descriptions for nonlinear behaviors of the devices. The small sizes transistor can reduce the IC layout area. In the forward of Optical communication, the Photo Diode will translate the 850nm optical signal to electrical signal, after that, the electrical signal will be amplified by TIA(Transimpedance Amplifier) and LA(Limiting Amplifier). We will use different bandwidth broaden technique to satisfy the requirement of 10Gb/s. For example, C-peaking tech, L-peaking tech, and the compensation tech. In this work, we use the L-peaking and compensation tech in TIA. The schematic of LA is Cherry-Hooper Amplifier. At the end of the research, we hope we can integrate the PD+TIA+LA in the future.
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