The Study of Substrate High-Low Junction and Post NH3 Plasma Treatment on Gd2O3 nanocrystal Memory
碩士 === 長庚大學 === 電子工程學研究所 === 97 === Recently, floating gate memory devices widely be used in non-volatile data storage application. However, there are some major issues including devices scaling limitation, higher operation voltage and poor data retention time needed to overcome for conventional flo...
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/p365ju |
| Summary: | 碩士 === 長庚大學 === 電子工程學研究所 === 97 === Recently, floating gate memory devices widely be used in non-volatile data storage application. However, there are some major issues including devices scaling limitation, higher operation voltage and poor data retention time needed to overcome for conventional floating gate memory which employed poly-silicon as the charge storage layer. In order to solve these above issues, the nanocrystal memory devices which with discrete charge storage nodes have been proposed to be a possible candidate for the replacement of floating gate memory.
In this thesis, we propose a Gadolinium oxide (Gd2O3) nanocrystal (NC) memory structure with substrate high low junction and NH3 plasma treatment for nonvolatile flash memory application. The Gd2O3 nanocrystal memory with substrate high low junction by boron implant can improve the memory window and the program efficiency due to the hot carrier injection, and also get the good data endurance. The NH3 plasma treatment for Gd2O3-NC memory can improve the memory window and the data retention. This study can be the candidate for the next generation for the memory application.
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