The Study of Substrate High-Low Junction and Post NH3 Plasma Treatment on Gd2O3 nanocrystal Memory
碩士 === 長庚大學 === 電子工程學研究所 === 97 === Recently, floating gate memory devices widely be used in non-volatile data storage application. However, there are some major issues including devices scaling limitation, higher operation voltage and poor data retention time needed to overcome for conventional flo...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/p365ju |