Local oxidation of ZnSe using an atomic force microscope
碩士 === 中原大學 === 奈米科技碩士學位學程 === 97 === The local oxidation on ZnSe surface by using atomic force microscope (AFM) under contact mode has been made. The influence of applied bias, tip writing speed, oxidation time and ambient humidity on the oxide size were investigated. Experimental results demonstra...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85739431529880294724 |
| Summary: | 碩士 === 中原大學 === 奈米科技碩士學位學程 === 97 === The local oxidation on ZnSe surface by using atomic force microscope (AFM) under
contact mode has been made. The influence of applied bias, tip writing speed,
oxidation time and ambient humidity on the oxide size were investigated.
Experimental results demonstrated the threshold voltage of tip-induced local oxidation
of ZnSe was about 6.24 V. The relation between the oxide height （width）and bias was
fitted linearly. The oxide height was increased exponentially with reciprocal of tip
writing speed or oxidation time increased. The growth rate of oxide decayed fast as
oxidation time increased.
Under the same applied bias and tip writing speed, the oxide height were almost the
same in different ambient humidity. However, the oxide width was increased as the
ambient humidity increased. We think the ambient humidity affected the lateral scale
of the water bridge which connect the sample surface and the tip of probe.
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