| Summary: | 碩士 === 清雲科技大學 === 電機工程研究所 === 97 === Two kinds of miniaturizations techniques with frequency reductive are studied in this thesis. The first one is capacitance radial-slot perturbations, and the second one is inductive Ω-shaped perturbations, both techniques are applied for the dual-mode ring and the dual-mode double-ring resonators respectively. By the perturbations and matching techniques, the single band and dual band reduction for miniaturizations are achieve.
Results including surface current distributions and frequency responses are presented and discussed. First, the dual-mode double-ring resonators with radial-slot perturbations are proposed. The significant size reductions over 30 / 10 % are achieved at dual-band 1.40 / 2.12 GHz respectively. The lower insertion loss -2.14 / -1.18 dB, the higher rejection -42.02 dB and the wider bandwidth about 5.26 / 17.57% responses are presented. Second, dual-mode double-ring resonators with Ω-shaped perturbations are presented, the significant size reductions over 56 / 10% are obtainey at dual-band 1.13 / 2.11 GHz respectively. The lower insertion loss -2.49 / -0.75 dB, the higher rejection -19.93 dB and the wider bandwidth about 4.82/16.45% responses are presented. Finally, based on an identical band and keeping 31% size reductions, the frequency responses of the single-ring and double-ring are analyze. The single-ring of radial-slot and Ω-shaped are with wider bandwidth 6.89% and 5.95% and deeper rejection level -33.36 / -44.39 dB and -33.63 / -53.21 dB respectively. The double-ring of radial-slot and Ω-shaped are with wider bandwidth 8.65% and 7.5% and deeper rejection level -24.59 / -41.08 dB and 24.25 / -20.04 dB.
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