Fabrications and Electro-Optical Properties of P-Type ZnO Films
碩士 === 大葉大學 === 電機工程學系 === 97 === In this work, the p-type N-Al co-doped ZnO films were deposited at room temperature on corning glass substrates by magnetron radio frequency (RF) sputtering. We studied the influences of crystalline orientation, surface morphology and doping concentration on the con...
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ndltd-TW-097DYU004420422015-11-20T04:18:27Z http://ndltd.ncl.edu.tw/handle/89450305579413816781 Fabrications and Electro-Optical Properties of P-Type ZnO Films P型氧化鋅薄膜之製作與光電特性研究 Zi-An Peng 彭子安 碩士 大葉大學 電機工程學系 97 In this work, the p-type N-Al co-doped ZnO films were deposited at room temperature on corning glass substrates by magnetron radio frequency (RF) sputtering. We studied the influences of crystalline orientation, surface morphology and doping concentration on the conductivity、carrier concentration、mobility、transmittance and photoluminescence. We realized controllable growth of n-type and p-type Al-N co-doped ZnO thin films by adiusting the radio frequency power, reducing intrinsic defects, and activating N-related acceptors.The sputtering parameters were adjusted and employed to obtain the optimum electro-optical properties of ZnO:(Al, N) thin film. The optimum conditions for the growth of 400-nm ZnO:(N, Al) films are set with ZnO:Al RF power = 230 W and working pressure = 10 mTorr. The postannealing temperature was fixed in 550 oC for 30 min under nitrogen ambient. As a result, we achieve a lowest resistivity with value of 1.6 Ωcm, carrier concentration of 2.3×1016 m-3 and mobility of 165 cm2/Vs. The average optical transmittance within the visible spectra is more than 80 %. It is found that the ZnO:(Al, N) films with Al/Zn of 10~20 at.% and N/Al of 1~1.3 reveal a p-type character conduction, approaching to the theoretical calculation 2:1.It is also found that the main defects of p-type ZnO:(Al, N) are combined with Zinc vacancies (Vzn) and oxygen vacancies (Vo), possibly leading to the formation of the bonds Al-N by the substitution of Al for of Zn atoms and the substitution of N for O atoms, which may result in p-type conduction in Al-N co-doped ZnO thin films. Li-Min Wang 王立民 2009 學位論文 ; thesis 142 zh-TW |
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碩士 === 大葉大學 === 電機工程學系 === 97 === In this work, the p-type N-Al co-doped ZnO films were deposited at room temperature on corning glass substrates by magnetron radio frequency (RF) sputtering. We studied the influences of crystalline orientation, surface morphology and doping concentration on the conductivity、carrier concentration、mobility、transmittance and photoluminescence. We realized controllable growth of n-type and p-type Al-N co-doped ZnO thin films by adiusting the radio frequency power, reducing intrinsic defects, and activating N-related acceptors.The sputtering parameters were adjusted and employed to obtain the optimum electro-optical properties of ZnO:(Al, N) thin film.
The optimum conditions for the growth of 400-nm ZnO:(N, Al) films are set with ZnO:Al RF power = 230 W and working pressure = 10 mTorr. The postannealing temperature was fixed in 550 oC for 30 min under nitrogen ambient. As a result, we achieve a lowest resistivity with value of 1.6 Ωcm, carrier concentration of 2.3×1016 m-3 and mobility of 165 cm2/Vs. The average optical transmittance within the visible spectra is more than 80 %. It is found that the ZnO:(Al, N) films with Al/Zn of 10~20 at.% and N/Al of 1~1.3 reveal a p-type character conduction, approaching to the theoretical calculation 2:1.It is also found that the main defects of p-type ZnO:(Al, N) are combined with Zinc vacancies (Vzn) and oxygen vacancies (Vo), possibly leading to the formation of the bonds Al-N by the substitution of Al for of Zn atoms and the substitution of N for O atoms, which may result in p-type conduction in Al-N co-doped ZnO thin films.
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Li-Min Wang |
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Li-Min Wang Zi-An Peng 彭子安 |
author |
Zi-An Peng 彭子安 |
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Zi-An Peng 彭子安 Fabrications and Electro-Optical Properties of P-Type ZnO Films |
author_sort |
Zi-An Peng |
title |
Fabrications and Electro-Optical Properties of P-Type ZnO Films |
title_short |
Fabrications and Electro-Optical Properties of P-Type ZnO Films |
title_full |
Fabrications and Electro-Optical Properties of P-Type ZnO Films |
title_fullStr |
Fabrications and Electro-Optical Properties of P-Type ZnO Films |
title_full_unstemmed |
Fabrications and Electro-Optical Properties of P-Type ZnO Films |
title_sort |
fabrications and electro-optical properties of p-type zno films |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/89450305579413816781 |
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