Effect of annealing on the electrical properties of aluminum-zinc oxide thin films

• Main Authors: Lu-yung Lin, 林呂勇
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/76489015950593196004

碩士 === 逢甲大學 === 化學工程學所 === 97 === In this study, zinc acetate dihydrate was used as a starting material, absolute ethanol and aluminum nitrate were served as the solvent and dopant sources respectively. Then, thin films were laid by spin coating on a substrate. After that, we used tube furnaces combined with a reducing atmosphere to grow crystal and create oxygen vacancy intentionally by varying manufacturing parameters. By way of chemical reactions and heat treatment, ZnO thin films with high conductivity and transmittance are obtained. The experiment results show that the manufacturing process with multilayer method has enhanced the growth of crystalline on (002) plane, the ideal ratio of Al dopant was Al/Zn=1.5 at%, and better quality of crystalline was obtained under reducing atmosphere (3% H2+97% Ar) and heat treatment of 550 ºC. This indicates that the manufacturing process with sol-gel method has obviously improved the optical and electrical properties of the AZO thin films. For transparent conductive thin films of the best quality, the sheet resistance reached 750 Ω/□, the resistance reached 9.8×10-2 Ω．cm, and the transmittance in visible light area was over 80%. Dopant different ions of zinc oxide films in the meanwhile, we discovered that heat trement under air or reducing atmosphere, when dopant flurine that can improvement the sheet resistance of zinc oxide films, when FAZO in 3% H2 and heat trement of 550 ºC, the sheet resistannce reached 48000 Ω/□, the resistance reached 6.78 Ω．cm.