Preparation of cuprous oxide thin film by Electroless Plating Process

• Main Authors: Mei-Feng YU, 余美鳳
• Other Authors: Hong-Ying Chen
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/51808793216395111070

碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系 === 97 === In this study, the electroless plating with different solutions is applied to fabricate the cuprous oxide film on ITO.The cupric oxide films would be formed while the solution consisting of copper(II) sulfate (CuSO4) and sodium thiosulfate (Na2S2O3) was used. The microstructure was retained after annealing. The cuprous oxide films would be formed by alternative dipping between A solution (CuSO4 and Na2S2O3) and B solution (NaOH ). The thickness of cuprous oxide films monotonically increased with dipping times, but the transmittance of the films would be decreased. The clip materials which were used to fix the sample would significantly influence the deposition rate of cuprous oxide films. The best dipping condition of cuprous oxide films on ITO substrates comes out when we use the solution consisting of CuSO4, NaKC4H4O6, and formaldehyde mixture above pH12.9 and 5 hours dipping time. The growth of cuprous oxide films could be monitored by quartz crystal microbalance as a function of growth time.