Preparation of cuprous oxide thin film by Electroless Plating Process
碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系 === 97 === In this study, the electroless plating with different solutions is applied to fabricate the cuprous oxide film on ITO.The cupric oxide films would be formed while the solution consisting of copper(II) sulfate (CuSO4) and sodium thiosulfate (Na2S2O3) was us...
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ndltd-TW-097KUAS80630472017-05-25T04:35:57Z http://ndltd.ncl.edu.tw/handle/51808793216395111070 Preparation of cuprous oxide thin film by Electroless Plating Process 以無電鍍法製備氧化亞銅薄膜及其特性分析 Mei-Feng YU 余美鳳 碩士 國立高雄應用科技大學 化學工程與材料工程系 97 In this study, the electroless plating with different solutions is applied to fabricate the cuprous oxide film on ITO.The cupric oxide films would be formed while the solution consisting of copper(II) sulfate (CuSO4) and sodium thiosulfate (Na2S2O3) was used. The microstructure was retained after annealing. The cuprous oxide films would be formed by alternative dipping between A solution (CuSO4 and Na2S2O3) and B solution (NaOH ). The thickness of cuprous oxide films monotonically increased with dipping times, but the transmittance of the films would be decreased. The clip materials which were used to fix the sample would significantly influence the deposition rate of cuprous oxide films. The best dipping condition of cuprous oxide films on ITO substrates comes out when we use the solution consisting of CuSO4, NaKC4H4O6, and formaldehyde mixture above pH12.9 and 5 hours dipping time. The growth of cuprous oxide films could be monitored by quartz crystal microbalance as a function of growth time. Hong-Ying Chen 陳弘穎 2009 學位論文 ; thesis 73 zh-TW |
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碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系 === 97 === In this study, the electroless plating with different solutions is applied to fabricate the cuprous oxide film on ITO.The cupric oxide films would be formed while the solution consisting of copper(II) sulfate (CuSO4) and sodium thiosulfate (Na2S2O3) was used. The microstructure was retained after annealing. The cuprous oxide films would be formed by alternative dipping between A solution (CuSO4 and Na2S2O3) and B solution (NaOH ). The thickness of cuprous oxide films monotonically increased with dipping times, but the transmittance of the films would be decreased. The clip materials which were used to fix the sample would significantly influence the deposition rate of cuprous oxide films.
The best dipping condition of cuprous oxide films on ITO substrates comes out when we use the solution consisting of CuSO4, NaKC4H4O6, and formaldehyde mixture above pH12.9 and 5 hours dipping time. The growth of cuprous oxide films could be monitored by quartz crystal microbalance as a function of growth time.
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author2 |
Hong-Ying Chen |
author_facet |
Hong-Ying Chen Mei-Feng YU 余美鳳 |
author |
Mei-Feng YU 余美鳳 |
spellingShingle |
Mei-Feng YU 余美鳳 Preparation of cuprous oxide thin film by Electroless Plating Process |
author_sort |
Mei-Feng YU |
title |
Preparation of cuprous oxide thin film by Electroless Plating Process |
title_short |
Preparation of cuprous oxide thin film by Electroless Plating Process |
title_full |
Preparation of cuprous oxide thin film by Electroless Plating Process |
title_fullStr |
Preparation of cuprous oxide thin film by Electroless Plating Process |
title_full_unstemmed |
Preparation of cuprous oxide thin film by Electroless Plating Process |
title_sort |
preparation of cuprous oxide thin film by electroless plating process |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/51808793216395111070 |
work_keys_str_mv |
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