A Novel Copper Electroplating Formula for Filling Through Silicon Vias
碩士 === 國立中興大學 === 化學工程學系所 === 97 === The development of modern science and technology proceeds quicker and quicker. Three-dimensional (3D) integration of chips is fast growing to carry out high-speed performance and high-density packaging. 3D integration uses through-silicon-vias (TSVs) to interconn...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/18681473917516633111 |