Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer

碩士 === 國立中興大學 === 光電工程研究所 === 97 === In this work, a random copolymer, PS-r-PMMA, is used as dielectric layer for a pentacene OTFT. The PS-r-PMMA dielectric can be uniformly coated on the surface with hydroxyl groups in a very simple spin coating process. After thermal annealing, a layer of end-func...

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Main Authors: Hui-Chen Huang, 黃惠真
Other Authors: Zingway Pei
Format: Others
Language:en_US
Online Access:http://ndltd.ncl.edu.tw/handle/40125489441846152124
id ndltd-TW-097NCHU5124002
record_format oai_dc
spelling ndltd-TW-097NCHU51240022016-04-29T04:19:41Z http://ndltd.ncl.edu.tw/handle/40125489441846152124 Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer 應用共聚合物於介電層的低電壓有機電晶體研究 Hui-Chen Huang 黃惠真 碩士 國立中興大學 光電工程研究所 97 In this work, a random copolymer, PS-r-PMMA, is used as dielectric layer for a pentacene OTFT. The PS-r-PMMA dielectric can be uniformly coated on the surface with hydroxyl groups in a very simple spin coating process. After thermal annealing, a layer of end-functionalized PS-r-PMMA will graft to the OH- group forming polymer brushes. Then dipped samples are in toluene in order to remove the residue PS-r-PMMA, forming a flat and thin film of a few nanometers. We can take advantage of annealing process and rinsing by toluene for thickness control. By means of annealing and rinsing process, PS-r-PMMA has the potential to use in large-are and low-cost fabrication, such as inkjet printing, slot coating, doctor blade. The pentacene-based OTFTs with annealing temperature at 190°C, 150°C were successfully demonstrated, exhibiting operation voltage as low as 5V and S.S is smaller than 0.3 V/dec. Zingway Pei 裴靜偉 學位論文 ; thesis 75 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立中興大學 === 光電工程研究所 === 97 === In this work, a random copolymer, PS-r-PMMA, is used as dielectric layer for a pentacene OTFT. The PS-r-PMMA dielectric can be uniformly coated on the surface with hydroxyl groups in a very simple spin coating process. After thermal annealing, a layer of end-functionalized PS-r-PMMA will graft to the OH- group forming polymer brushes. Then dipped samples are in toluene in order to remove the residue PS-r-PMMA, forming a flat and thin film of a few nanometers. We can take advantage of annealing process and rinsing by toluene for thickness control. By means of annealing and rinsing process, PS-r-PMMA has the potential to use in large-are and low-cost fabrication, such as inkjet printing, slot coating, doctor blade. The pentacene-based OTFTs with annealing temperature at 190°C, 150°C were successfully demonstrated, exhibiting operation voltage as low as 5V and S.S is smaller than 0.3 V/dec.
author2 Zingway Pei
author_facet Zingway Pei
Hui-Chen Huang
黃惠真
author Hui-Chen Huang
黃惠真
spellingShingle Hui-Chen Huang
黃惠真
Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer
author_sort Hui-Chen Huang
title Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer
title_short Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer
title_full Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer
title_fullStr Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer
title_full_unstemmed Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer
title_sort study on low-voltage otft by using copolymer as the dielectric layer
url http://ndltd.ncl.edu.tw/handle/40125489441846152124
work_keys_str_mv AT huichenhuang studyonlowvoltageotftbyusingcopolymerasthedielectriclayer
AT huánghuìzhēn studyonlowvoltageotftbyusingcopolymerasthedielectriclayer
AT huichenhuang yīngyònggòngjùhéwùyújièdiàncéngdedīdiànyāyǒujīdiànjīngtǐyánjiū
AT huánghuìzhēn yīngyònggòngjùhéwùyújièdiàncéngdedīdiànyāyǒujīdiànjīngtǐyánjiū
_version_ 1718251942034014208