| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 97 === This thesis concerns the preparation of AZO transparent conducting films and single crystal silicon particle containing AZO transparent conducting films by sol-gel method. For the former, AZO transparent conducting films were prepared by spin-coating and followed N2 and 6%H2/Ar heat treatments .We investigate the effect of different process parameters ,like Al/Zn atomic ratio ,sol concentration , to collocate with different heat treatment atmosphere , thickness , on AZO transparent conducting films .By investigating the effect of different process parameters on AZO transparent conducting films , it was found that appropriate amount of Al atoms (0.5~1.5at%) doped in the ZnO film could reduce the resistivity of AZO film .On the other hand, appropriate sol concentration(0.5~0.75M) could enhance the conductivity of AZO film. The lowest resistivity is about 2×10-3Ω-cm after N2 and H2/Ar(6%)heat treatment . The UV/VIS spectra revealed that the transmittance of AZO transparent conducting films was higher than 85% in the visible region .
For the latter ,we use AZO colloid solutions mix with different ratio single crystal silicon particles, different resistivity single crystal silicon particles to study the optical property and conductivity of single crystal silicon particle containing AZO transparent conducting films after heat treatment .For the study on the preparation of single crystal silicon particle containing AZO transparent conducting films, it revealed that the lower mix ratio(0.05g/5ml,0.1g/5ml) of silicon particles the higher transmittance(80%,70%) was found .The lower resistivity of single crystal silicon particles the better conductivity of AZO film was found ,after the preparation of single crystal silicon particle containing AZO films .When the mix ratio was 0.05g/5ml ,the resistivity of silicon particles was 1.59×10-2Ω-cm , the transmittance of single crystal silicon particle containing AZO films was about 80% in the visible region, the resistivity was as low as 1.55×10-2Ω-cm .
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