| Summary: | 碩士 === 國立中興大學 === 電機工程學系所 === 97 === High Electron Mobility Transistors (HEMTs) technologies are widely used in military radars, mobile phones, and wireless base stations owing to their excellent performance of operating in high temperature, high frequency and large power. In this thesis, a more comprehensive study of the pseudomorphic-HEMT devices provided from the WIN Semiconductor Corporation was reported. We measured both of the DC (I-V curves) and high frequency characteristics (fT and fmax) of the devices.
The results indicate that the drain saturation current is 72.5 mA/mm based on IDS-VDS DC characteristic measurement when there is no VGS bias. Furthermore, according to the IDS-VGS curves, the threshold voltage is 0.49 V and the max transconductance, Gm, is 320 mS/mm as VDS equals to 1.0 V. This study helps to demonstrate and understand the device physics, device optimization, and device application of high electron mobility transistors.
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