Investigation of Improving External Quantum Efficiency of AlGaInP-Based LEDs by Wet-Etching n-Cladding Layer
碩士 === 國立中興大學 === 精密工程學系所 === 97 === High-performance AlGaInP-based light emitting diodes (LEDs) were widely used, although the AlGaInP-based material has been developed for many years and its internal quantum efficiency has approached above 90%. However, the external quantum efficiency of AlGaInP i...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/23209910014023388517 |