Investigation of Improving External Quantum Efficiency of AlGaInP-Based LEDs by Wet-Etching n-Cladding Layer
碩士 === 國立中興大學 === 精密工程學系所 === 97 === High-performance AlGaInP-based light emitting diodes (LEDs) were widely used, although the AlGaInP-based material has been developed for many years and its internal quantum efficiency has approached above 90%. However, the external quantum efficiency of AlGaInP i...
Main Authors: | Chia-Hong Wang, 王嘉宏 |
---|---|
Other Authors: | 洪瑞華 |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/23209910014023388517 |
Similar Items
-
Study on external quantum efficiency of AlGaInP LEDs
by: Liang-Yu Yao, et al.
Published: (2005) -
Improvement on External Quantum Efficiency of AlGaInP-Based LEDs
by: Yi-Heng Chung, et al.
Published: (2003) -
Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
by: Ray-Hua Horng, et al.
Published: (2021-05-01) -
Investigation of Improving External Quantum Efficiency of AlGaInP-based LEDs by Roughened Window Layer
by: Yung-Lung Liang, et al.
Published: (2006) -
Improvement of external quantum efficiency of AlGaInP-based LEDs by high reflective metal substrate and roughing window layer
by: Szu-Lung Li, et al.