|碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === Carbon nanowalls were grown on silicon substrates by direct-current plasma enhanced chemical vapor deposition and measured the electron field emission of these coatings. It was found that the turn-on field could be as low as 1-2 V/um. After having successfully grown carbon nanowalls on silicon substrates, the composition of the feeding gas mixture, CH4/H2 and the DC discharge current, were changed to observe the morphology of the specimens. Carbon nanowalls were also grown on other substrates such as graphite and pencil lead. We expect that carbon nanowalls can be used for applications to lamp, backlights and field emission displays in the future.
Experimental results suggest that the concentration ratio of methane and hydrogen need to be greater than 6% for carbon nanowalls to become more evidence under our experimental conditions. For carbon nanowalls grown on graphite, the electron field emission current density is higher than that of carbon nanowalls grown on silicon substrate. Carbon nanowalls were also grown on pencil leads, which exhibit excellent electron field emission properties. We expect it to be a useful process for fabricating all-carbon cold cathodes.