Influence of Fe-doping on the Properties of High-dielectric Ba0.5Sr0.5TiO3 Thin Film

• Main Authors: Hsuan Yu, 余軒
• Other Authors: Bing-Jing Li
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/35051562901191435965

碩士 === 國立成功大學 === 電機工程學系碩博士班 === 97 === In this study, the Fe-doped Ba0.5Sr0.5TiO3 high dielectric thin films with Fe content of 0wt%, 0.25wt%, 0.5wt%, 1wt%, 2wt%, 3wt%, and 5wt% were deposited by rf magnetron sputter on Pt/SiO2/Si substrates, and MIM structures are fabricated. Discussion and analysis the influence of Fe dopant to the BST thin film with the relation of crystallization and electrical properties. The crystallization and microstructure were obtained by XRD, AFM and SEM measurement. The electrical properties measurements of C-V were obtained by Agilent4294A impedance analyzer, and calculated the relative dielectric constants, and Agilent E5270B measured the relation of I-V characteristics. The result of XRD means Fe-doped BST thin films still hold it’s perovskite structure, and the Fe3+ ion substituted the Ti4+ site of BST structure. Doping slightly Fe to the BST thin film leads to more dense of the morphology of SEM measurement, and AFM measurement shows the surface roughness of the film were more smoothly. The electrical properties of I-V relation come to the lowest leakage current appeared in Fe content of 0.5wt%, 1wt%, and 2wt% of BST thin film, with 5.924×10-8(A/cm2) in electric field 100(kV/cm) of 2wt% Fe content sample, but the dielectric constants and capacitance decreased after Fe doping. The more dense film leads to lower leakage current density.