| Summary: | 碩士 === 國立成功大學 === 電機工程學系碩博士班 === 97 === Cyclic voltammetry (CV) was utilized to examine the reaction potential of the ions in the solution, and this made us know the mechanism of the co- eletrodeposition. Energy dispersive spectroscopy (EDS) was used to estimate the composition of the thin films. The crystal structure of the thin films was identified by powder x-ray diffraction (XRD). Raman spectroscopy was applied for analysis of second phase. The microstructure was observed by scanning electron microscope (SEM) and atomic force microscope (AFM), and the compactness of the films was also characterized.
Based on EDS analysis, composition of the precursor can be adjust by the concentrations of ions in the solution, then make the films close to the stoichiometry of CuInSe2(Cu：In：Se＝1：1：2) after selenization process. And from the Raman spectroscopy, it reveals the reducing of Cu2Se and excess Se. The quality and roughness of the thin films can be improved by adjusting the potential of electrodeposition. And with the assistant of light and raising the temperature of the solution, the crystal structure is much better by XRD and SEM analysis. The (112) peak becomes stronger and sharper. At -0.7V, the potential of electrodepsition, the film of CuInSe2 is more compact and flatter by SEM and AFM analysis. When the temperature of eletrodeosition solution raises to 50℃, the CuInSe2 becomes flatter.
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