Study of InGaP HEMTs and InxGa1-xAs MOS-HEMTs for RF and Digital Applications
碩士 === 國立交通大學 === 材料科學與工程系所 === 97 === The RF and digital performance of InGaP/In0.22Ga0.78As pseudomorphic high electron mobility transistors (PHEMTs) with different doping profiles are investigated. In order to improve the device linearity for RF applications, the uniformly-doped and channel-doped...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49780952586595582915 |