Study of InGaP HEMTs and InxGa1-xAs MOS-HEMTs for RF and Digital Applications
碩士 === 國立交通大學 === 材料科學與工程系所 === 97 === The RF and digital performance of InGaP/In0.22Ga0.78As pseudomorphic high electron mobility transistors (PHEMTs) with different doping profiles are investigated. In order to improve the device linearity for RF applications, the uniformly-doped and channel-doped...
Main Authors: | Chung, Jung-Tao, 鍾榮濤 |
---|---|
Other Authors: | Edward Yi Chang |
Format: | Others |
Language: | en_US |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/49780952586595582915 |
Similar Items
-
Study of Tri-Gate InxGa1-xAs HEMTs for Low-Noise Amplifier Applications
by: Kuo, Che-Ning, et al.
Published: (2018) -
Studies of InxGa1-xAs/GaAs quantum well
by: ZHENG,XIU-JIE, et al.
Published: (1990) -
Optical spectroscopy of InxGa1-xAs/GaAs quantum wells
by: Adams, Stephen J. A.
Published: (1992) -
Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor
by: Lidsky, David
Published: (2015) -
Investigations of Heterostructure Field-Effect Transistors with Graded InxGa1-xAs Channel
by: Yih-Juan Li, et al.
Published: (2004)