| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 97 === In this thesis, the role and the physical origin of surface plasmon and spoof surface plasmon in our devices are investigated. Using these special phenomena, we fabricate far-infrared surface plasmon devices.
First, far-infrared spoof surface plasmon filter is fabricated by depositing a 2D metal holes array on GaAs substrate. When light exciting (GaAs/metal) (1,0) SSP modes, a strong EOT phenomenon is observed. By using the phenomenon above, we can fulfill a narrow-band far-infrared filter working under 4 THz. Furthermore, we exclude the role of surface plasmon in EOT phenomenon by the experiment results.
Second, a broadband far-infrared thermal emitter is proposeed by exciting (vacuum/N-GaAs) (1,0), (1,1), (2,0), and (2,1) SPP modes simultaneously with the help of the long period 2D grating on the N-GaAs substrate. The bandwidth of devices is proportional to the grating period directly.
Third, the (metal/silicon nitride/N-GaAs) trilayer far-infrared surface plasmon thermal emitter, without changing the doping concentration of N-GaAs substrate, we can change the (metal/silicon nitride/N-GaAs) SPP modes by simply changing the period of the upper metal grating or the thickness of silicon nitride layer. The radiation frequency changeable far infrared narrow-band thermal emitter is fabricated.
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