Study of Far-infrared Surface Plasmon Devices
碩士 === 國立交通大學 === 電子工程系所 === 97 === In this thesis, the role and the physical origin of surface plasmon and spoof surface plasmon in our devices are investigated. Using these special phenomena, we fabricate far-infrared surface plasmon devices. First, far-infrared spoof surface plasmon filter is...
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ndltd-TW-097NCTU54281052015-10-13T15:42:19Z http://ndltd.ncl.edu.tw/handle/95853198331256150884 Study of Far-infrared Surface Plasmon Devices 遠紅外線表面電漿子元件之研究 Lai, Wei-Liang 賴威良 碩士 國立交通大學 電子工程系所 97 In this thesis, the role and the physical origin of surface plasmon and spoof surface plasmon in our devices are investigated. Using these special phenomena, we fabricate far-infrared surface plasmon devices. First, far-infrared spoof surface plasmon filter is fabricated by depositing a 2D metal holes array on GaAs substrate. When light exciting (GaAs/metal) (1,0) SSP modes, a strong EOT phenomenon is observed. By using the phenomenon above, we can fulfill a narrow-band far-infrared filter working under 4 THz. Furthermore, we exclude the role of surface plasmon in EOT phenomenon by the experiment results. Second, a broadband far-infrared thermal emitter is proposeed by exciting (vacuum/N-GaAs) (1,0), (1,1), (2,0), and (2,1) SPP modes simultaneously with the help of the long period 2D grating on the N-GaAs substrate. The bandwidth of devices is proportional to the grating period directly. Third, the (metal/silicon nitride/N-GaAs) trilayer far-infrared surface plasmon thermal emitter, without changing the doping concentration of N-GaAs substrate, we can change the (metal/silicon nitride/N-GaAs) SPP modes by simply changing the period of the upper metal grating or the thickness of silicon nitride layer. The radiation frequency changeable far infrared narrow-band thermal emitter is fabricated. Lee, Chien-Ping 李建平 2009 學位論文 ; thesis 67 zh-TW |
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碩士 === 國立交通大學 === 電子工程系所 === 97 === In this thesis, the role and the physical origin of surface plasmon and spoof surface plasmon in our devices are investigated. Using these special phenomena, we fabricate far-infrared surface plasmon devices.
First, far-infrared spoof surface plasmon filter is fabricated by depositing a 2D metal holes array on GaAs substrate. When light exciting (GaAs/metal) (1,0) SSP modes, a strong EOT phenomenon is observed. By using the phenomenon above, we can fulfill a narrow-band far-infrared filter working under 4 THz. Furthermore, we exclude the role of surface plasmon in EOT phenomenon by the experiment results.
Second, a broadband far-infrared thermal emitter is proposeed by exciting (vacuum/N-GaAs) (1,0), (1,1), (2,0), and (2,1) SPP modes simultaneously with the help of the long period 2D grating on the N-GaAs substrate. The bandwidth of devices is proportional to the grating period directly.
Third, the (metal/silicon nitride/N-GaAs) trilayer far-infrared surface plasmon thermal emitter, without changing the doping concentration of N-GaAs substrate, we can change the (metal/silicon nitride/N-GaAs) SPP modes by simply changing the period of the upper metal grating or the thickness of silicon nitride layer. The radiation frequency changeable far infrared narrow-band thermal emitter is fabricated.
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Lee, Chien-Ping |
author_facet |
Lee, Chien-Ping Lai, Wei-Liang 賴威良 |
author |
Lai, Wei-Liang 賴威良 |
spellingShingle |
Lai, Wei-Liang 賴威良 Study of Far-infrared Surface Plasmon Devices |
author_sort |
Lai, Wei-Liang |
title |
Study of Far-infrared Surface Plasmon Devices |
title_short |
Study of Far-infrared Surface Plasmon Devices |
title_full |
Study of Far-infrared Surface Plasmon Devices |
title_fullStr |
Study of Far-infrared Surface Plasmon Devices |
title_full_unstemmed |
Study of Far-infrared Surface Plasmon Devices |
title_sort |
study of far-infrared surface plasmon devices |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/95853198331256150884 |
work_keys_str_mv |
AT laiweiliang studyoffarinfraredsurfaceplasmondevices AT làiwēiliáng studyoffarinfraredsurfaceplasmondevices AT laiweiliang yuǎnhóngwàixiànbiǎomiàndiànjiāngziyuánjiànzhīyánjiū AT làiwēiliáng yuǎnhóngwàixiànbiǎomiàndiànjiāngziyuánjiànzhīyánjiū |
_version_ |
1717767856050929664 |