Resistive switching properties of sputtered ZrO2 thin films with Ti top electrode
碩士 === 國立交通大學 === 電子工程系所 === 97 === Many kinds of consumer electrical commercial products are becoming more and more popular following with the development of the technology. All kinds of products need the memory, especially non-volatile memory, which can store data without power. The resistive swit...
Main Authors: | Tsai, Chen-Han, 蔡承翰 |
---|---|
Other Authors: | 曾俊元 |
Format: | Others |
Language: | en_US |
Published: |
2009
|
Online Access: | http://ndltd.ncl.edu.tw/handle/21990866743027682291 |
Similar Items
-
Sputtered ZrO2 thin film and its resistive switching properties
by: Hao-Hsiang Hsu, et al.
Published: (2014) -
Effects of Ti top electrode and embedded Mo metal on sputtered deposited ZrO2-based resistive switching memory devices
by: Chi-Hsiang Weng, et al.
Published: (2008) -
Effect of Ti Top Electrode on Bipolar Resistive Switching Properties of RF Sputtered SrZrO3 Thin Films
by: Yeh, Yu-Ting, et al.
Published: (2009) -
Resistive Switching Properties of Sputtered CaCu3Ti4O12 Thin Films with Various Electrode Materials
by: Cheng Huan Yang, et al.
Published: (2010) -
Unipolar resistive switching behavior of ZrO2 memory thin film with CaO:ZrO2
by: Huang, Tai-Yuan, et al.
Published: (2010)