3–6 GHz Ultra-Wideband Low-Power Self-Forward-Body-Bias Low-Noise Amplifier
碩士 === 國立交通大學 === 電信工程系所 === 97 === A low-power low-noise amplifier (LNA) implemented in 0.18-μm TSMC CMOS 1P6M technology utilizing a self-forward-body-biased (SFBB) technique is proposed for UWB low-frequency band system in this thesis. By using the SFBB techniques, it reduces supply voltage as we...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13476867793533104047 |
| Summary: | 碩士 === 國立交通大學 === 電信工程系所 === 97 === A low-power low-noise amplifier (LNA) implemented in 0.18-μm TSMC CMOS 1P6M technology utilizing a self-forward-body-biased (SFBB) technique is proposed for UWB low-frequency band system in this thesis. By using the SFBB techniques, it reduces supply voltage as well as saves additional biased circuits used in conventional FBB techniques, which leads to a low power consumption with low supply voltage of 1.06 V for two MOSFETs drain-to-source voltage drops. Using the complementary configuration and inter-stage direct coupling technique also saves the biased circuits. However, the self forward body bias technique will give rise to some noise figure degradation. Therefore, we proposed the second LNA to improve the noise figure of the preceding LNA in this thesis. The measurement result shows that the LNA 1 also presents a maximum power gain of 15.5 dB with a good input/output match (S11< –12 dB/ S22< -17 dB) and an average noise figure of 3.2 dB in the frequency range of 2.6–6.6 GHz while consuming power of 6.38 mW. And the measurement result shows that the NF-improved LNA presents a maximum power gain of 16.2ddB with a good input/output match (S11< -12 dB/ S22< -16 dB) and an average noise figure of 2.6 dB in the frequency range of 2.0–6.6 GHz while consuming power of 4.5 mW.
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