Run-to-Run Etching Depth Control for TCP Poly-Silicon etcher

• Main Authors: Yen Chia-Liang, 顏嘉良
• Other Authors: Chen Tsung-Lin
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/79940287835934689561

碩士 === 國立交通大學 === 機械工程系所 === 97 === 　The development of Integrated Circuits (IC) is moving toward higher and higher density. In echoing this trend, the size of all kinds of elements and associated line widths have to be narrowed accordingly. Therefore, how to transfer the pattern onto wafers accurately has been an important issue. This thesis purposed using the run-to-run control method to improve the accuracy of etching depth for the TCP poly silicon etcher. 　Two control methods have been studied for the control of TCP etchers; one is EWMA (Exponential Weighted Moving Average), the other one is LS (Least Square). In EWMA controller, the control parameter is the etching power, while they were etching power, chamber pressure, and gas (chlorine) flow rate in the LS control. Simulation results indicate that EWMA and LS controller improve the accuracy of etching depth by 4.7% and 1.9%, respectively. Due to limited resources, the experiments were only done with the EWMA controller. The experimental data indicated that the improvement of etching accuracy was 2.11%