P-i-n organic light-emitting diodes with a common ambipolar host material
碩士 === 國立交通大學 === 顯示科技研究所 === 97 === Efficient p-doped and n-doped transport layers composed of a common ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) with tungsten oxide (WO3) and cesium fluoride (CsF), respectively have been developed. The incorporation of 10% WO3 into MADN as...
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ndltd-TW-097NCTU58120322015-10-13T15:42:34Z http://ndltd.ncl.edu.tw/handle/14704498560761245705 P-i-n organic light-emitting diodes with a common ambipolar host material 共主體之等雙極材料應用於p-i-n有機發光二極體研究 Lin, Kuan-Heng 林冠亨 碩士 國立交通大學 顯示科技研究所 97 Efficient p-doped and n-doped transport layers composed of a common ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) with tungsten oxide (WO3) and cesium fluoride (CsF), respectively have been developed. The incorporation of 10% WO3 into MADN as p-doped HIL and 30% CsF into MADN as n-doped EIL have been found to enhance the carrier injection from both anode and cathode, respectively. By also using MADN as a common material as host emitter, we demonstrated a much simplified p-i-n sky blue OLED device based on BUBD-1 dopant with low drive voltage (4.7 V), and high power efficiency (5.7 lm/W) at 1700 cd/m2 and C.I.Ex,y (0.18, 0.33) as well as a dichromatic p-i-n white fluorescent OLED device based on BUBD-1 and yellow EY-53 dopant with low drive voltage (4.5 V), and high power efficiency (6.3 lm/W) at 1800 cd/m2, C.I.Ex,y (0.38, 0.40) and Color Redering Index(CRI) 67. Chen, Chin-Hsin Hsu, Ken-Ying 陳金鑫 許根玉 2009 學位論文 ; thesis 71 zh-TW |
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碩士 === 國立交通大學 === 顯示科技研究所 === 97 === Efficient p-doped and n-doped transport layers composed of a common ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) with tungsten oxide (WO3) and cesium fluoride (CsF), respectively have been developed. The incorporation of 10% WO3 into MADN as p-doped HIL and 30% CsF into MADN as n-doped EIL have been found to enhance the carrier injection from both anode and cathode, respectively. By also using MADN as a common material as host emitter, we demonstrated a much simplified p-i-n sky blue OLED device based on BUBD-1 dopant with low drive voltage (4.7 V), and high power efficiency (5.7 lm/W) at 1700 cd/m2 and C.I.Ex,y (0.18, 0.33) as well as a dichromatic p-i-n white fluorescent OLED device based on BUBD-1 and yellow EY-53 dopant with low drive voltage (4.5 V), and high power efficiency (6.3 lm/W) at 1800 cd/m2, C.I.Ex,y (0.38, 0.40) and Color Redering Index(CRI) 67.
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author2 |
Chen, Chin-Hsin |
author_facet |
Chen, Chin-Hsin Lin, Kuan-Heng 林冠亨 |
author |
Lin, Kuan-Heng 林冠亨 |
spellingShingle |
Lin, Kuan-Heng 林冠亨 P-i-n organic light-emitting diodes with a common ambipolar host material |
author_sort |
Lin, Kuan-Heng |
title |
P-i-n organic light-emitting diodes with a common ambipolar host material |
title_short |
P-i-n organic light-emitting diodes with a common ambipolar host material |
title_full |
P-i-n organic light-emitting diodes with a common ambipolar host material |
title_fullStr |
P-i-n organic light-emitting diodes with a common ambipolar host material |
title_full_unstemmed |
P-i-n organic light-emitting diodes with a common ambipolar host material |
title_sort |
p-i-n organic light-emitting diodes with a common ambipolar host material |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/14704498560761245705 |
work_keys_str_mv |
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