P-i-n organic light-emitting diodes with a common ambipolar host material

• Main Authors: Lin, Kuan-Heng, 林冠亨
• Other Authors: Chen, Chin-Hsin
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/14704498560761245705

碩士 === 國立交通大學 === 顯示科技研究所 === 97 === Efficient p-doped and n-doped transport layers composed of a common ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) with tungsten oxide (WO3) and cesium fluoride (CsF), respectively have been developed. The incorporation of 10% WO3 into MADN as p-doped HIL and 30% CsF into MADN as n-doped EIL have been found to enhance the carrier injection from both anode and cathode, respectively. By also using MADN as a common material as host emitter, we demonstrated a much simplified p-i-n sky blue OLED device based on BUBD-1 dopant with low drive voltage (4.7 V), and high power efficiency (5.7 lm/W) at 1700 cd/m2 and C.I.Ex,y (0.18, 0.33) as well as a dichromatic p-i-n white fluorescent OLED device based on BUBD-1 and yellow EY-53 dopant with low drive voltage (4.5 V), and high power efficiency (6.3 lm/W) at 1800 cd/m2, C.I.Ex,y (0.38, 0.40) and Color Redering Index(CRI) 67.