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碩士 === 國立中央大學 === 電機工程研究所 === 97 === The main challenge for growing GaN on Si is overcome the cracking issue caused by the large mismatch in lattice constants and thermal expansion coefficients between GaN and Si. Various growth methods, such as LT-AlN interlayer, AlGaN graded layer, and in situ SiN...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28676557251152621714 |