| Summary: | 碩士 === 國立中山大學 === 光電工程學系研究所 === 97 === In this thesis, we focus on the properties of Al-doped ZnO (AZO) thin films for opto-electronic applications. AZO films were prepared by radio-frequency sputtering on silicon and optical glass substrates with 98wt% ZnO and 2wt% Al2O3 alloy target. AZO films were prepared under various deposition parameters (RF power, background pressure, Ar flow, and substrate temperature). The optimal parameters for the conductive and transparent AZO films are power = 100W, pressure = 3mTorr, Ar flow = 5sccm, and substrate temperature 250℃. The film exhibits the resistivity(ρ) of 2.5×10-3 Ω-cm and 85% transparency in the 400-1800nm range.
To find out optimum substrate temperature for the AZO film on p-GaAs (p=2×1018), the samples were deposited at various temperatures followed by annealing at 400℃ for 30sec. The current-voltage (I-V) characteristics were measured. AZO films make good ohmic contact to p-GaAs to act as an electrode layer.
InGaAs quantum-dot solar cells of AZO contact layers have been fabricated. A high filling factor of 52% is achieved.
|
|---|
