Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE
碩士 === 國立中山大學 === 物理學系研究所 === 97 === In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)、KTH643(x=0.344)、KTH642(x=0.390)、KTH644 (x=0.397), we find that the ele...
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| Format: | Others |
| Language: | zh-TW |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/v3pydz |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 97 === In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)、KTH643(x=0.344)、KTH642(x=0.390)、KTH644 (x=0.397), we find that the electron have occupied the lowest two subbands, and the energy separation for each sample before illumination is 98 meV、107 meV、111 meV、119 meV. On the samples KTH641(x= 0.216)、KTH640(x= 0.294)、KTH642(x= 0.390)、KTH644(x= 0.394), we observe the electrons have spin splitting phenomenon, and the highest spin splitting energy separation’s value in our experiments is 10.6 meV. For all six samples have persistent photoconductivity effect’s behavior after illumination.
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