Improvement of Thermal Stability via N2/H2 and D2O Radical-annealing Treatment in Atomic Layer Deposition of HfO2 Gate Oxide

Improvement of Thermal Stability via N2/H2 and D2O Radical-annealing Treatment in Atomic Layer Deposition of HfO2 Gate Oxide

碩士 === 國立清華大學 === 材料科學工程學系 === 97 ===

Bibliographic Details
Main Authors:	Lin, Ming-Ho, 林民和
Other Authors:	Wu, Tai-Bor
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/70295487671029909093

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