Nitrogen incorporated Hafnium Dioxide dielectric thin film For Organic Thin Film Transistors
碩士 === 國立清華大學 === 材料科學工程學系 === 97 === Hafnium oxide is a high-k dielectric material which have dielectric constant of 25,high-k dielectric material use to be a gate oxide can decrease the threshold voltage and device scale for low voltage and microelectronics. Organic thin film transistors has bee...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05427454364168925544 |