| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 97 === One of the developmental trends for Transient Voltage Suppressor (TVS), the off-chip electrical-overstress (EOS) and electrostatic discharge (ESD) protection device, is to seek low-voltage and low capacitance solution for advance integrated circuit applications. In this paper, on the back-to-back diode-based TVS is proposed to provide both low capacitance and low breakdown voltage, which can be integrated with advance IC process or further optimized for discrete TVS device. The capacitance level, TLP I-V characteristic, DC I-V characteristic are investigated in this work, where it is shown that the proposed device can be promising candidate for low capacitance TVS applications. After the TLP test, the broken TVS diodes are inspected by IR-OBIRCH and EMMI for the identification of failure points. These data not only help further understanding of the breakdown mechanism in these lateral back-to-back diodes, but also provide guidelines for device structure optimization.
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