Low-capacitance Back-to-back Diode Transient Voltage Suppressor
碩士 === 國立清華大學 === 電子工程研究所 === 97 === One of the developmental trends for Transient Voltage Suppressor (TVS), the off-chip electrical-overstress (EOS) and electrostatic discharge (ESD) protection device, is to seek low-voltage and low capacitance solution for advance integrated circuit applications....
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ndltd-TW-097NTHU54280232015-11-20T04:19:10Z http://ndltd.ncl.edu.tw/handle/68847866883562000241 Low-capacitance Back-to-back Diode Transient Voltage Suppressor 低電容背對背二極體式暫態電壓抑制器之設計 Chen, Chia-Cheng 陳家承 碩士 國立清華大學 電子工程研究所 97 One of the developmental trends for Transient Voltage Suppressor (TVS), the off-chip electrical-overstress (EOS) and electrostatic discharge (ESD) protection device, is to seek low-voltage and low capacitance solution for advance integrated circuit applications. In this paper, on the back-to-back diode-based TVS is proposed to provide both low capacitance and low breakdown voltage, which can be integrated with advance IC process or further optimized for discrete TVS device. The capacitance level, TLP I-V characteristic, DC I-V characteristic are investigated in this work, where it is shown that the proposed device can be promising candidate for low capacitance TVS applications. After the TLP test, the broken TVS diodes are inspected by IR-OBIRCH and EMMI for the identification of failure points. These data not only help further understanding of the breakdown mechanism in these lateral back-to-back diodes, but also provide guidelines for device structure optimization. Lin, Chrong-Jung King, Ya-Chin 林崇榮 金雅琴 2009 學位論文 ; thesis 66 zh-TW |
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碩士 === 國立清華大學 === 電子工程研究所 === 97 === One of the developmental trends for Transient Voltage Suppressor (TVS), the off-chip electrical-overstress (EOS) and electrostatic discharge (ESD) protection device, is to seek low-voltage and low capacitance solution for advance integrated circuit applications. In this paper, on the back-to-back diode-based TVS is proposed to provide both low capacitance and low breakdown voltage, which can be integrated with advance IC process or further optimized for discrete TVS device. The capacitance level, TLP I-V characteristic, DC I-V characteristic are investigated in this work, where it is shown that the proposed device can be promising candidate for low capacitance TVS applications. After the TLP test, the broken TVS diodes are inspected by IR-OBIRCH and EMMI for the identification of failure points. These data not only help further understanding of the breakdown mechanism in these lateral back-to-back diodes, but also provide guidelines for device structure optimization.
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author2 |
Lin, Chrong-Jung |
author_facet |
Lin, Chrong-Jung Chen, Chia-Cheng 陳家承 |
author |
Chen, Chia-Cheng 陳家承 |
spellingShingle |
Chen, Chia-Cheng 陳家承 Low-capacitance Back-to-back Diode Transient Voltage Suppressor |
author_sort |
Chen, Chia-Cheng |
title |
Low-capacitance Back-to-back Diode Transient Voltage Suppressor |
title_short |
Low-capacitance Back-to-back Diode Transient Voltage Suppressor |
title_full |
Low-capacitance Back-to-back Diode Transient Voltage Suppressor |
title_fullStr |
Low-capacitance Back-to-back Diode Transient Voltage Suppressor |
title_full_unstemmed |
Low-capacitance Back-to-back Diode Transient Voltage Suppressor |
title_sort |
low-capacitance back-to-back diode transient voltage suppressor |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/68847866883562000241 |
work_keys_str_mv |
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