Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices

Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices

碩士 === 國立清華大學 === 工程與系統科學系 === 97 ===

Bibliographic Details
Main Authors: Lin, Hsiao-Len, 林孝倫
Other Authors: Chang-Liao, Kuei-Shu
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/85788773007853849370
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spelling ndltd-TW-097NTHU55930612015-10-13T12:09:18Z http://ndltd.ncl.edu.tw/handle/85788773007853849370 Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices 金屬閘極與高介電係數阻擋層對電荷陷阱式快閃記憶體元件的影響 Lin, Hsiao-Len 林孝倫 碩士 國立清華大學 工程與系統科學系 97 Chang-Liao, Kuei-Shu 張廖貴術 2009 學位論文 ; thesis 86 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 工程與系統科學系 === 97 ===
author2 Chang-Liao, Kuei-Shu
author_facet Chang-Liao, Kuei-Shu
Lin, Hsiao-Len
林孝倫
author Lin, Hsiao-Len
林孝倫
spellingShingle Lin, Hsiao-Len
林孝倫
Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices
author_sort Lin, Hsiao-Len
title Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices
title_short Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices
title_full Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices
title_fullStr Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices
title_full_unstemmed Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices
title_sort effects of metal gate and high-k blocking layer on charge-trapping flash memory devices
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/85788773007853849370
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