Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices

Effects of Metal Gate and High-k Blocking Layer on Charge-Trapping Flash Memory Devices

碩士 === 國立清華大學 === 工程與系統科學系 === 97 ===

Bibliographic Details
Main Authors:	Lin, Hsiao-Len, 林孝倫
Other Authors:	Chang-Liao, Kuei-Shu
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/85788773007853849370

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