A simple method to improve the performance of GaN-based light-emitting diodes by post-growth of indium oxide in a furnace

• Main Authors: Jian-Ye Liou, 劉健業
• Other Authors: Tai-Yuan.Lin
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/21404335534202309769

碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 97 === A simple method to improve the performance of GaN-based light-emitting diodes (LEDs) was demonstrated. Vapor-solid(VS) mechanism was used to grow indium oxide crystallites on the surface of GaN-based light-emitting diodes (LEDs). The InN crystallites was first deposited followed by an oxidation of the InN materials forming the indium oxide crystallites in the atmospheric pressure. The morphology, chemical compositions, crystal structure, and post-growth of the grown indium oxide (In2O3 ) were investigated by scanning electron microscope (SEM),energy dispersive X-ray spectrometer (EDS),X-ray diffraction(XRD),Raman spectra, Photoluminescence(PL), Electro- luminescence(EL), respectively. The result of SEM resealed that we successfully fabricated the In2O3 crystallites on the surfact of LED by the oxidation of the pre-deposited InN crystallites. The chemical compositions of the grown In2O3 were investigated by SEM , the atomic ratio of In and O are 21.54% and 58.20%, respectively. According to the results of XRD and Raman measurements, the per-deposited hexagonal InN crystallites were transformed into the cubic In2O3 crystallites. It was found by PL that we didn’t destroy the optical properties through heating to 550℃. The EL intensity of the GaN-based LEDs coated with In2O3 crystallites is about 6 times larger than that of the GaN-based LEDs with the In2O3 coating. Our results indicate that low temperature fabrication of In2O3 crystallites on GaN-based LEDs is a nondestructive and feasible method to achieve the high-output LEDs from the LED manufacture point.