Characterizations of an ultrathin amorphous oxide diffusion barrier for Cu metallization on Si
碩士 === 國立臺灣科技大學 === 材料科技研究所 === 97 === In this study, sputtered Cu film thermal properties on Si substrate have been improved using an amorphous oxide (HoScOx) as the diffusion barrier layer. For this HoScOx (x=3~4) film only (hereafter called the HoScOx layer), it still possesses good thermal stabi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62970360809717924958 |
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