| Summary: | 碩士 === 聖約翰科技大學 === 電子工程系碩士班 === 97 === In the first, the n-type silicon wafers are used as the raw materials for porous silicon structures which can be served as ethanol sensors. It is found that different porous silicon structure would cause the different sensitivity on ethanol. With the advantages of low cost, easy fabrication, and large surface area density, the porous silicon can be the candidate of sensors.
In our experiments, various sizes including the depth, width, and porosity of porous silicon structures cause different sensitivities of porous silicon sensors. To realize the relationship between the structures and their performance, the porous silicon samples are analyzed by SEM、3D Profile、FTIR and I-V/C-V measurements.
Besides, a special etching container is designed for double-side porous silicon structure. In the study, the p-type silicon wafers are used as the raw materials. In the first, the porous silicon film is formed on the normal polished side. After that, the anode and cathode are changed during the process, and the porous silicon film is formed on the other side. Such double-side porous silicon samples are also analyzed by photoluminescence spectrometer, SEM, and I-V measurements. Such a design is useful for the double-side fabrication process.
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