The Effect of Electrode Layout on Nitride-based High-Power Light Emitting Diodes

碩士 === 南台科技大學 === 電子工程系 === 97 === Nitride-based high-power light emitting diodes (LEDs) with different electrode layouts were discussed and analyzed. The turn-on voltage (Vf) was inversely proportional to the area of mesa (Amesa). The result was caused by lower contact resistance of N-layer at the...

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Bibliographic Details
Main Authors: Zheng-Hsien Lin, 林政賢
Other Authors: Yu-Zung Chiou
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/46204532361611336400

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