Design and Implementation of Wideband Low Noise Amplifier
碩士 === 國立臺北科技大學 === 電子電腦與通訊產業研發碩士專班 === 97 === In this thesis, we design two wideband low noise amplifiers (LNAs) and a multiband LNA for L band and DTV、DAB systems, which are implemented in TSMC 0.18 μm CMOS technology. In this thesis, we propose three circuits. In the first circuit, we propose a C...
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ndltd-TW-097TIT056500102019-08-04T03:37:22Z http://ndltd.ncl.edu.tw/handle/c34946 Design and Implementation of Wideband Low Noise Amplifier 寬頻低雜訊放大器之研製 Shou-Chung Yen 嚴守中 碩士 國立臺北科技大學 電子電腦與通訊產業研發碩士專班 97 In this thesis, we design two wideband low noise amplifiers (LNAs) and a multiband LNA for L band and DTV、DAB systems, which are implemented in TSMC 0.18 μm CMOS technology. In this thesis, we propose three circuits. In the first circuit, we propose a CMOS wideband low noise amplifier without inductor, operated in the range from 100MHz~900MHz, with current reuse, mirror bias, gain control and input matching device noise cancellation technologies. Measurement results at maximum power consumption mode show that the gain is 11.2~13.6dB, the noise figure (NF) is less than 2.75dB, and the third-order intercept point (IIP3) is about -4.6dBm at minimum power operation mode.The LNA consumes power between 7.25mW (low gain mode) ~17.8mW (high gain mode) at 1.8V power supply. The core area is 0.29 mm2. In the second circuit,we propose a CMOS wideband low noise amplifier (LNA), operated in the range from 470MHz~3GHz, with current reuse, mirror bias, and source inductive degeneration technologies. Measurement results at maximum power consumption mode show that the gain is 11.3~13.6dB, the NF is less than 2.5dB, and the third-order intercept point is about 1dBm. It consumes maximum power about 27mW at 1.8V power supply. The core area is 0.52mm2. In the third circuit, we propose a interference rejection multiband differential low noise amplifier (LNA), operated in the range from 800MHz~1.4GHz, with Capacitive Cross-Coupling (CCC), Gm-Boosted, mirror bias, and negative resistance technologies. Measurement results the gain is 13.16dB, the NF is less than 2.87dB, and the third-order intercept point is about 6.36dBm. It consumes power about 32.9mW at 1.8V power supply. The core area is 1.82 mm2. 黃育賢 2009 學位論文 ; thesis 84 zh-TW |
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碩士 === 國立臺北科技大學 === 電子電腦與通訊產業研發碩士專班 === 97 === In this thesis, we design two wideband low noise amplifiers (LNAs) and a multiband LNA for L band and DTV、DAB systems, which are implemented in TSMC 0.18 μm CMOS technology.
In this thesis, we propose three circuits. In the first circuit, we propose a CMOS wideband low noise amplifier without inductor, operated in the range from 100MHz~900MHz, with current reuse, mirror bias, gain control and input matching device noise cancellation technologies. Measurement results at maximum power consumption mode show that the gain is 11.2~13.6dB, the noise figure (NF) is less than 2.75dB, and the third-order intercept point (IIP3) is about -4.6dBm at minimum power operation mode.The LNA consumes power between 7.25mW (low gain mode) ~17.8mW (high gain mode) at 1.8V power supply. The core area is 0.29 mm2.
In the second circuit,we propose a CMOS wideband low noise amplifier (LNA), operated in the range from 470MHz~3GHz, with current reuse, mirror bias, and source inductive degeneration technologies. Measurement results at maximum power consumption mode show that the gain is 11.3~13.6dB, the NF is less than 2.5dB, and the third-order intercept point is about 1dBm. It consumes maximum power about 27mW at 1.8V power supply. The core area is 0.52mm2.
In the third circuit, we propose a interference rejection multiband differential low noise amplifier (LNA), operated in the range from 800MHz~1.4GHz, with Capacitive Cross-Coupling (CCC), Gm-Boosted, mirror bias, and negative resistance technologies. Measurement results the gain is 13.16dB, the NF is less than 2.87dB, and the third-order intercept point is about 6.36dBm. It consumes power about 32.9mW at 1.8V power supply. The core area is 1.82 mm2.
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author2 |
黃育賢 |
author_facet |
黃育賢 Shou-Chung Yen 嚴守中 |
author |
Shou-Chung Yen 嚴守中 |
spellingShingle |
Shou-Chung Yen 嚴守中 Design and Implementation of Wideband Low Noise Amplifier |
author_sort |
Shou-Chung Yen |
title |
Design and Implementation of Wideband Low Noise Amplifier |
title_short |
Design and Implementation of Wideband Low Noise Amplifier |
title_full |
Design and Implementation of Wideband Low Noise Amplifier |
title_fullStr |
Design and Implementation of Wideband Low Noise Amplifier |
title_full_unstemmed |
Design and Implementation of Wideband Low Noise Amplifier |
title_sort |
design and implementation of wideband low noise amplifier |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/c34946 |
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AT shouchungyen designandimplementationofwidebandlownoiseamplifier AT yánshǒuzhōng designandimplementationofwidebandlownoiseamplifier AT shouchungyen kuānpíndīzáxùnfàngdàqìzhīyánzhì AT yánshǒuzhōng kuānpíndīzáxùnfàngdàqìzhīyánzhì |
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