Studies on the Fabrication and Characteristics of Regioregular Poly(3-hexylthiophene) Flexible Organic Thin-Film Transistor

• Main Authors: Wei-Chi Chen, 陳維騏
• Other Authors: Chin-Tsou Kuo
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/21386742594624203658

碩士 === 大同大學 === 化學工程學系(所) === 97 === In this study, the characteristics of flexible organic thin-film transistors (OTFT) fabricated with highly regioregular poly(3-hexylthiophene) (P3HT) as semiconductor layer on poly(ethylene terephthalate) (PET) have been investigated. Thermal curable poly(dimer acid-co-alkyl polyamine) (PA), dual layer of organic dielectric, PA, poly(4-vinylphenol) (PVP), polystyrene (PS) and poly(methyl methacrylate) (PMMA), and inorganic dielectric, aluminum oxide (Al2O3) were used as gate dielectric. The field-effect mobility and on/off current ratio of the top-contact flexible OTFT with PA dielectric layer were 3.74 × 10-2 cm2/Vs and 1.05 × 101, respectively.The field-effect mobility and on/off current ratio of the bottom-contact flexible OTFT with PMMA/PA dual dielectric layer were 1.68 × 10-2 cm2/Vs and 9.29 × 101, respectively. Whereas the field-effect mobility and on/off current ratio of the top-contact flexible OTFT with PMMA/PA dual dielectric layer were 2.56 × 10-2 cm2/Vs and 1.65 × 103, respectively. Therefore, the performance of top-contact OTFT is superior to that of bottom-contact one. The mobility and on/off current ratio of flexible OTFT with PA/PVP dual layer as gate dielectric layer were 4.57 × 10-2 cm2/Vs and 1.01 × 103, respectively. The mobility and on/off current ratio of flexible OTFT with PA/PS dual layer as gate dielectric layer were 8.42 × 10-2 cm2/Vs and 1.05 × 103, respectively. The mobility and on/off current ratio of flexible OTFT with PA/PMMA dual layer as gate dielectric layer were 5.60 × 10-2 cm2/Vs and 3.13 × 102, respectively. The mobility and on/off current ratio of flexible OTFT with PMMA/PA dual layer as gate dielectric layer were 2.36 × 10-2 cm2/Vs and 1.65 × 103, respectively, are better than the performance of device with PA layer in evidence. All of the OTFTs performance with polymer dual gate dielectric exhibit better characteristics than the device with PA layer. The mobility and on/off current ratio of P3HT OTFT with PA/Al2O3 (150 nm) dual layer gate dielectric were 8.52 × 10-2 cm2/Vs and 2.46 × 105, respectively, when VG was scanning form 10 V to -50 V. The on/off current ratio increases five orders of magnitude larger than that of device with PA layer. It is found that the characteristics of the OTFT with PMMA/PA gate dielectric subjected to bending test are superior to those of other devices. After bending 65 times, the field-effect mobility of the top-contact flexible OTFT with PMMA/PA dual dielectric layer decreases from 8.73 × 10-3 cm2/Vs to 3.79 × 10-3 and the on/off current ratio decreases from 1.41 × 102 to 1.21 × 101.