The Dicing Method for Thin Silicon Wafer

• Main Authors: You-Cen Liu, 劉祐岑
• Other Authors: Chao-Heng Chien
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/44908604210304611969

碩士 === 大同大學 === 機械工程學系(所) === 97 === The purposes of the research are mainly on yield improve, cost reduction and getting the optimum or best quality of the wafer (4mil in thickness) by re-using the existing equipment, changing the cutting method and adjusting the parameter of the platform. When wafer cutting under 4 mil (102 μm) of silicon wafer, Need to choose the tape of stronger viscosity, due to defects caused by vibration. The cutting tool needs to choose the soft binder and the small particles diamond can reduces friction and the collision the cutting tool and the chip. The cutter with soft binder and small grain can reduce the friction and collision, to avoid wafer damage. The cutting speed and rotational speed must reduce to 25000 RPM and 20mm/s, such cut quality is the best. This method can reduce the impact force between the cutter and the wafer. In general traditional cutting methods for the grain products of small and thin wafers, the Crack and the Chipping, can not be avoided. The single axle two section of type cutting way with the above experimental parameters, can result in the quality which the sophisticated equipment produces, thus may save the productive time and the new equipment's cost.