| Summary: | 碩士 === 長庚大學 === 光電工程研究所 === 98 === In this thesis, low temperature processes (< 300) were developed℃ in the fabricating metal–insulator–metal oxide (MIM) capacitors, and oxide-based thin film transistor (TFTs) using either transparent ZnO films deposited by pulsed laser deposition (PLD) or IZO films performed by DC sputtering as the n-type channel layers. In addition, the pentacene thin film deposited by thermal evaporation as the p-type channel layer of the organic thin film transistor (OTFTs) was also studied in this work. Recently, high-k materials were proposed to take as the excellent gate dielectric place of SiO2 to reduce the operated voltage of field-effect transistor (FET). However, defect distributions in high-k dielectrics strongly affect the performance of electronic devices. As a result, gas plasma treatments on the high-k dielectric have become essential methods for improving the characteristics of devices. In this work, we found that electrical parameters such as gate leakage, breakdown voltage and charge trapping at the oxide can be improved by using O2 and CF4 plasma treatments after deposition the HfO2 gate dielectric. After studying the plasma effect on MIM capacitors, the TFT devices were fabricated at low temperature processes. Electrical characteristics of the field effect mobility, subthreshold slope and on/off ratio of ZnO-TFT devices were measured to be 4.49 cm2/V-s, 1.8 V/decade and 1.9×105, respectively. The IZO-TFT devices exhibited the field effect mobility, subthreshold slope and on/off ratio were 23.5 cm25/V-s, 0.32V/decade and 4.4×10, respectively.
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