Resistive switching memory using high-κ TaOx film and IrOx electrode
碩士 === 長庚大學 === 電子工程學研究所 === 98 === Recently, resistance random access memory has been attracted lot of research to replace flash memory for next generation nanoscale nonvolatile memory due to its advantages with low power, high peed, scaling potential, non-volatility, low cost and so on. Reproducib...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15584642130208223812 |