UWB RF MEMS Single-Pole Double-Throw Switch

• Main Authors: Ming Zhan Kuo, 郭明展
• Other Authors: W. S. Feng
• Format: Others
• Online Access: http://ndltd.ncl.edu.tw/handle/13256011112849500109

碩士 === 長庚大學 === 電子工程學研究所 === 98 === At present, there are more and more diverse applications in MEMS, especially in RF MEMS. Due to a substantial increase in demand for telecommunications, MEMS technology can provide better communication quality and more intelligent sensing capabilities. In the MEMS technology of standard manufacturing processes circuit design, CMOS MEMS devices have the advantage with perfect stability of process equipment. These process parameters can reduce the production cost and improve reliability. While the integration of RF MEMS in CMOS chips, it can reduce the transmission-signal attenuation, parasitic capacitance and noise generation. To investigate the structure of SPDT RF MEMS switch device in this thesis, the use of finite element analysis hand on a systematic analysis with simulated 0.18µm manufacturing process and 0.35µm TSMC manufacturing processes is considered. For the microwave characterization of the HFSS software simulations in the high-frequency of 60GHz, it shows insertion loss of -0.72dB and -1.6dB, return loss of -26.3 ~-36.1dB and -16.6 ~-27.5dB, isolation of -28.5dB and -41.4dB. The properties of the mechanical actuators are simulated by the NCHC Coventorware software show different sizes of suspended structures. When the actuated voltage is applied with 16 volts and 20 volts, the height of the structure out of plane are 1.1μm and 0.3μm, respectively.