The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal
碩士 === 長庚大學 === 電子工程學系 === 98 === In this thesis, we propose a Gadolinium oxide (Gd2O3) nanocrystal memory structure to improve by CF4 plasma treatment with post rapid thermal anneal. First, we use sputter to deposited Gd2O3 layer, then use rapid thermal anneal to form nanocrystal. The Gd2O3 nano...
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ndltd-TW-098CGU054280252016-04-18T04:21:00Z http://ndltd.ncl.edu.tw/handle/70242242513971874532 The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal 利用四氟化碳電漿處理結合快速熱退火於三氧化二釓奈米晶體記憶體之研究 Jui Lin Hsu 許瑞麟 碩士 長庚大學 電子工程學系 98 In this thesis, we propose a Gadolinium oxide (Gd2O3) nanocrystal memory structure to improve by CF4 plasma treatment with post rapid thermal anneal. First, we use sputter to deposited Gd2O3 layer, then use rapid thermal anneal to form nanocrystal. The Gd2O3 nanocrystal memory with additional rapid thermal anneal in order to observed whether the formation of Gd2O3 nanocrystal memory, and also get better Electrical characteristics. The Gd2O3 nanocrystal memory with CF4 plasma treatment can improve the memory window, program/erase efficiency and the data retention. Finally, the electrical analysis such as, C-V hysteresis, charge program/ erase efficiency and retention time are investing by HP 4285. The Gd2O3 nanocrystal memory is observed by high resolution transmission electron microscope (HRTEM), and Energy-dispersive X-ray spectroscopy analysis used for identifying the elemental composition. This study can be the candidate for the next generation for the memory application. C. S. Lai J. C. Wang 賴朝松 王哲麒 2010 學位論文 ; thesis 75 |
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碩士 === 長庚大學 === 電子工程學系 === 98 === In this thesis, we propose a Gadolinium oxide (Gd2O3) nanocrystal memory structure to improve by CF4 plasma treatment with post rapid thermal anneal. First, we use sputter to deposited Gd2O3 layer, then use rapid thermal anneal to form nanocrystal. The Gd2O3 nanocrystal memory with additional rapid thermal anneal in order to observed whether the formation of Gd2O3 nanocrystal memory, and also get better Electrical characteristics. The Gd2O3 nanocrystal memory with CF4 plasma treatment can improve the memory window, program/erase efficiency and the data retention. Finally, the electrical analysis such as, C-V hysteresis, charge program/ erase efficiency and retention time are investing by HP 4285. The Gd2O3 nanocrystal memory is observed by high resolution transmission electron microscope (HRTEM), and Energy-dispersive X-ray spectroscopy analysis used for identifying the elemental
composition. This study can be the candidate for the next generation for the memory application.
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C. S. Lai |
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C. S. Lai Jui Lin Hsu 許瑞麟 |
author |
Jui Lin Hsu 許瑞麟 |
spellingShingle |
Jui Lin Hsu 許瑞麟 The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal |
author_sort |
Jui Lin Hsu |
title |
The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal |
title_short |
The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal |
title_full |
The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal |
title_fullStr |
The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal |
title_full_unstemmed |
The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal |
title_sort |
study of gd2o3 nanocrystal memory by using post cf4 plasma treatment and rapid thermal anneal |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/70242242513971874532 |
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