The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal

碩士 === 長庚大學 === 電子工程學系 === 98 === In this thesis, we propose a Gadolinium oxide (Gd2O3) nanocrystal memory structure to improve by CF4 plasma treatment with post rapid thermal anneal. First, we use sputter to deposited Gd2O3 layer, then use rapid thermal anneal to form nanocrystal. The Gd2O3 nano...

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Bibliographic Details
Main Authors: Jui Lin Hsu, 許瑞麟
Other Authors: C. S. Lai
Format: Others
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/70242242513971874532