Resistive Switching Properties of Sputtered CaCu3Ti4O12 Thin Films with Various Electrode Materials

• Main Authors: Cheng Huan Yang, 楊承桓
• Other Authors: H. L. Kao
• Format: Others
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/46232366738315101754

碩士 === 長庚大學 === 電子工程學系 === 98 === In this study, we investigated the switching behaviors of CaCu3Ti4O12(CCTO) with different work function materials as electrode. CCTO was deposited by RF sputter and annealed at various temperatures. The relationship between the crystalline of the CCTO and the initial resistance state of the devices was discussed. The operation voltage and retention of devices were measured by I-V sweep mode. There was no data loss at the nondestructive readout test for over 5000 seconds. The effect of the CCTO grain size on the operation voltage of the device was also explored. The leakage current of the device could be improved by using high work function metal electrode and annealing process. The operation voltage of the device decreased as the annealing temperature increased.