Study of intrinsic layer thickness effects on GaAs P-I-N solar cell characteristics
碩士 === 中原大學 === 電子工程研究所 === 98 === In this thesis we studied a series of gallium arsenide (GaAs) single-junction solar cells with different thicknesses of the intrinsic layer between P and N regions. By inspecting the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/40234664278211824685 |