| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 98 === Abstract
In recent years, one–dimensional (1D) ZnO structures have become
the focus of intensive research because their sizes range between the
clusters and the macro-particle, which is possible to show small size
effect of nanomaterials, surface effects and quantum-mechanic effects
and can be expected for wide applications in nanoscale optoelectronic
devices.
In this study, high-quality ZnO nanorods were successfully
fabricated by atmospheric pressure metalorganic chemical vapor
deposition technique using AlN as the buffer layer. The growth of ZnO
nanorods was conducted without any catalyst. Influences of various
growth conditions on the growth mechanism, morphology, structure and
optical properties of the nanorods fabricated were examined.
Experimental results show that the column diameter of ZnO nanorods is
resolved by the VI/II gas flow ratio of ZnO used, while the morphology
of nanorods is dependent on the V/III gas flow ratio employed for AlN
buffer layer.
As for the optical properties, only UV emissions with the energies
near the bandgap of ZnO was observed from the nanorods fabricated,
illustrateing the good quality of materials. In particular, the UV emission
from the specimen fabricated at 500℃ demonstrates a blue-shift
phenomenon, which is suggested to feature the quantum confinement
effect of carriers in the ZnO nanostructure fabricated.
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