The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells

碩士 === 修平技術學院 === 電機工程研究所 === 98 === This study used sol-gel ZnO seed layer on the FTO transparent conductive glass substrate, and the use of chemical bath deposition on the ZnO seed layer grown Zn0.995Gd0.005O nanowire immersed. Different concentrations of different immersion (5mM, 10mM, 20mM) and...

Full description

Bibliographic Details
Main Authors: Jyun-Zih Lai, 賴俊志
Other Authors: Ming-Cheng Kao
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/12003804788863648104
id ndltd-TW-098HIT05442002
record_format oai_dc
spelling ndltd-TW-098HIT054420022015-10-30T04:10:15Z http://ndltd.ncl.edu.tw/handle/12003804788863648104 The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells 釓摻雜氧化鋅奈米線於染料敏化太陽能電池之特性研究 Jyun-Zih Lai 賴俊志 碩士 修平技術學院 電機工程研究所 98 This study used sol-gel ZnO seed layer on the FTO transparent conductive glass substrate, and the use of chemical bath deposition on the ZnO seed layer grown Zn0.995Gd0.005O nanowire immersed. Different concentrations of different immersion (5mM, 10mM, 20mM) and different soaking time (1 h, 2 h, 3h, 6h) on Zn0.995Gd0.005O nanowire of the crystal structure, surface microstructure, optical and physical characteristics influence . The structure will Zn0.995Gd0.005O nanowires produced dye-sensitized solar cells, study of different process parameters on dye-sensitized Solar Cell. Experimental results show that, Gd doped ZnO nanowires of wurtzite ZnO remains (002) axis preferred orientation, doped with Gd content, Zn0.995Gd0.005O nanowires energy gap decreased from the 3.196 eV to 3.106 eV, shows the optical absorption of visible light wavelength will increase. With the soaking concentration and soaking time increased, the nanowire length and width of the increasing trend, helps dye adsorption. Another characteristic of solar cells, along with the soaking concentration and soaking time increased, the dye-sensitized solar cell short circuit current density JSC (mA/cm2), open circuit voltage Voc (V), fill factor (FF) and photoelectric conversion efficiency η (%) will increase. But when soaking concentration to 20 mM, the dye-sensitized solar cell characteristics will decline, this may be because when the nanowire length and diameter increased, the dye-sensitized solar cell internal resistance increased, leading to solar cells properties down. Last From the result, Zn0.995Gd0.005O nanowire electrode on the concentration of 10 mM soak under the photoelectric conversion efficiency than the pure ZnO thin film electrode device efficiency is about 85% higher. Ming-Cheng Kao 高銘政 2010 學位論文 ; thesis 74 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 修平技術學院 === 電機工程研究所 === 98 === This study used sol-gel ZnO seed layer on the FTO transparent conductive glass substrate, and the use of chemical bath deposition on the ZnO seed layer grown Zn0.995Gd0.005O nanowire immersed. Different concentrations of different immersion (5mM, 10mM, 20mM) and different soaking time (1 h, 2 h, 3h, 6h) on Zn0.995Gd0.005O nanowire of the crystal structure, surface microstructure, optical and physical characteristics influence . The structure will Zn0.995Gd0.005O nanowires produced dye-sensitized solar cells, study of different process parameters on dye-sensitized Solar Cell. Experimental results show that, Gd doped ZnO nanowires of wurtzite ZnO remains (002) axis preferred orientation, doped with Gd content, Zn0.995Gd0.005O nanowires energy gap decreased from the 3.196 eV to 3.106 eV, shows the optical absorption of visible light wavelength will increase. With the soaking concentration and soaking time increased, the nanowire length and width of the increasing trend, helps dye adsorption. Another characteristic of solar cells, along with the soaking concentration and soaking time increased, the dye-sensitized solar cell short circuit current density JSC (mA/cm2), open circuit voltage Voc (V), fill factor (FF) and photoelectric conversion efficiency η (%) will increase. But when soaking concentration to 20 mM, the dye-sensitized solar cell characteristics will decline, this may be because when the nanowire length and diameter increased, the dye-sensitized solar cell internal resistance increased, leading to solar cells properties down. Last From the result, Zn0.995Gd0.005O nanowire electrode on the concentration of 10 mM soak under the photoelectric conversion efficiency than the pure ZnO thin film electrode device efficiency is about 85% higher.
author2 Ming-Cheng Kao
author_facet Ming-Cheng Kao
Jyun-Zih Lai
賴俊志
author Jyun-Zih Lai
賴俊志
spellingShingle Jyun-Zih Lai
賴俊志
The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells
author_sort Jyun-Zih Lai
title The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells
title_short The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells
title_full The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells
title_fullStr The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells
title_full_unstemmed The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells
title_sort characterization of gd-doped zno nanowire for the dye-sensitized solar cells
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/12003804788863648104
work_keys_str_mv AT jyunzihlai thecharacterizationofgddopedznonanowireforthedyesensitizedsolarcells
AT làijùnzhì thecharacterizationofgddopedznonanowireforthedyesensitizedsolarcells
AT jyunzihlai qiúcànzáyǎnghuàxīnnàimǐxiànyúrǎnliàomǐnhuàtàiyángnéngdiànchízhītèxìngyánjiū
AT làijùnzhì qiúcànzáyǎnghuàxīnnàimǐxiànyúrǎnliàomǐnhuàtàiyángnéngdiànchízhītèxìngyánjiū
AT jyunzihlai characterizationofgddopedznonanowireforthedyesensitizedsolarcells
AT làijùnzhì characterizationofgddopedznonanowireforthedyesensitizedsolarcells
_version_ 1718116177449844736