The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells
碩士 === 修平技術學院 === 電機工程研究所 === 98 === This study used sol-gel ZnO seed layer on the FTO transparent conductive glass substrate, and the use of chemical bath deposition on the ZnO seed layer grown Zn0.995Gd0.005O nanowire immersed. Different concentrations of different immersion (5mM, 10mM, 20mM) and...
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ndltd-TW-098HIT054420022015-10-30T04:10:15Z http://ndltd.ncl.edu.tw/handle/12003804788863648104 The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells 釓摻雜氧化鋅奈米線於染料敏化太陽能電池之特性研究 Jyun-Zih Lai 賴俊志 碩士 修平技術學院 電機工程研究所 98 This study used sol-gel ZnO seed layer on the FTO transparent conductive glass substrate, and the use of chemical bath deposition on the ZnO seed layer grown Zn0.995Gd0.005O nanowire immersed. Different concentrations of different immersion (5mM, 10mM, 20mM) and different soaking time (1 h, 2 h, 3h, 6h) on Zn0.995Gd0.005O nanowire of the crystal structure, surface microstructure, optical and physical characteristics influence . The structure will Zn0.995Gd0.005O nanowires produced dye-sensitized solar cells, study of different process parameters on dye-sensitized Solar Cell. Experimental results show that, Gd doped ZnO nanowires of wurtzite ZnO remains (002) axis preferred orientation, doped with Gd content, Zn0.995Gd0.005O nanowires energy gap decreased from the 3.196 eV to 3.106 eV, shows the optical absorption of visible light wavelength will increase. With the soaking concentration and soaking time increased, the nanowire length and width of the increasing trend, helps dye adsorption. Another characteristic of solar cells, along with the soaking concentration and soaking time increased, the dye-sensitized solar cell short circuit current density JSC (mA/cm2), open circuit voltage Voc (V), fill factor (FF) and photoelectric conversion efficiency η (%) will increase. But when soaking concentration to 20 mM, the dye-sensitized solar cell characteristics will decline, this may be because when the nanowire length and diameter increased, the dye-sensitized solar cell internal resistance increased, leading to solar cells properties down. Last From the result, Zn0.995Gd0.005O nanowire electrode on the concentration of 10 mM soak under the photoelectric conversion efficiency than the pure ZnO thin film electrode device efficiency is about 85% higher. Ming-Cheng Kao 高銘政 2010 學位論文 ; thesis 74 zh-TW |
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碩士 === 修平技術學院 === 電機工程研究所 === 98 === This study used sol-gel ZnO seed layer on the FTO transparent conductive glass substrate, and the use of chemical bath deposition on the ZnO seed layer grown Zn0.995Gd0.005O nanowire immersed. Different concentrations of different immersion (5mM, 10mM, 20mM) and different soaking time (1 h, 2 h, 3h, 6h) on Zn0.995Gd0.005O nanowire of the crystal structure, surface microstructure, optical and physical characteristics influence . The structure will Zn0.995Gd0.005O nanowires produced dye-sensitized solar cells, study of different process parameters on dye-sensitized Solar Cell.
Experimental results show that, Gd doped ZnO nanowires of wurtzite ZnO remains (002) axis preferred orientation, doped with Gd content, Zn0.995Gd0.005O nanowires energy gap decreased from the 3.196 eV to 3.106 eV, shows the optical absorption of visible light wavelength will increase. With the soaking concentration and soaking time increased, the nanowire length and width of the increasing trend, helps dye adsorption. Another characteristic of solar cells, along with the soaking concentration and soaking time increased, the dye-sensitized solar cell short circuit current density JSC (mA/cm2), open circuit voltage Voc (V), fill factor (FF) and photoelectric conversion efficiency η (%) will increase. But when soaking concentration to 20 mM, the dye-sensitized solar cell characteristics will decline, this may be because when the nanowire length and diameter increased, the dye-sensitized solar cell internal resistance increased, leading to solar cells properties down. Last From the result, Zn0.995Gd0.005O nanowire electrode on the concentration of 10 mM soak under the photoelectric conversion efficiency than the pure ZnO thin film electrode device efficiency is about 85% higher.
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author2 |
Ming-Cheng Kao |
author_facet |
Ming-Cheng Kao Jyun-Zih Lai 賴俊志 |
author |
Jyun-Zih Lai 賴俊志 |
spellingShingle |
Jyun-Zih Lai 賴俊志 The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells |
author_sort |
Jyun-Zih Lai |
title |
The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells |
title_short |
The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells |
title_full |
The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells |
title_fullStr |
The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells |
title_full_unstemmed |
The characterization of Gd-doped ZnO nanowire for the dye-sensitized solar cells |
title_sort |
characterization of gd-doped zno nanowire for the dye-sensitized solar cells |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/12003804788863648104 |
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